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Course Criteria
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3.00 Credits
Fabrication technology for silicon and gallium arsenide integrated circuits with emphasis on sub-micron structures. Topics include epitaxy, diffusion, binary and ternary phase diagrams, grown and deposited oxides and nitrides, polysilicon and silicide technology, single-and multi-metal systems, plasma and chemical etching, ion milling photo, e-beam and X-ray lithography. Prerequisites/Corequisites: Prerequisite: ECSE 4250 or equivalent. When Offered: Spring term even-numbered years. Credit Hours: 3
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3.00 Credits
Physical properties of operation, modeling, and application of selected semiconductor microwave devices. Devices considered include varactors, p-i-n diodes, Schottky barrier diodes, avalanche transit time devices, transferred electron devices and field effect transistors. Terminal behavior of these devices, their noise characteristics, and their use in microwave circuits. Prerequisites/Corequisites: Corequisite: ECSE 6230. When Offered: Offered on sufficient demand. Credit Hours: 3
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3.00 Credits
Special problems of semiconductor devices operating at high voltage and high current levels. Devices include p-i-n and Schottky diodes, bipolar junction transistors, power MOSFETs and thyristors. Topics include space charge limited current flow, microplasmas, avalanche breakdown, junction termination, high-level injection, emitter crowding, double injection, second breakdown, triggering mechanisms, plasma propagation, switching and recovery characteristics. Introduction to the Insulated-Gate Bipolar Transistor. Prerequisites/Corequisites: Prerequisites: ECSE 6230 and ECSE 6290 or basic knowledge (at the graduate level) of semiconductor devices or permission of the instructor. When Offered: Spring term odd-numbered years. Credit Hours: 3
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3.00 Credits
A brief review of interaction of light with matter. Operating principles, basic designs and applications of optoelectronic devices such as Light Emitting Diodes, Laser Diodes, Photodetectors and Solar Cells. Electro-optic, Acousto-optic and Non-linear optic based optical components such as Modulators, Switches, Couplers, Multiplexers and Amplifiers. Optical Waveguides and Fibers. Optoelectronic Applications such as Fiber Optic and Free Space Optical Communication, Photovoltaics, Thermophotovoltaics, and Solid State Lighting. Prerequisites/Corequisites: Prerequisites: ECSE 2210 and ECSE 4720 or equivalent. When Offered: Offered spring term on sufficient demand. Credit Hours: 3
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3.00 Credits
A continuation of ECSE 6230. Physical operation of insulated-gate and heterojunction field-effect devices including short-channel and hot-carrier effects. Studies of other heterojunction devices emphasize the exploitation of particular quantum-mechanical phenomena to achieve unique device behavior. Prerequisites/Corequisites: Prerequisite: ECSE 6230 or equivalent. When Offered: Spring term. Credit Hours: 3
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3.00 Credits
Theory and practice of IC fabrication in a research laboratory environment. Test chips are fabricated and the resulting devices and circuits evaluated. Processes and fabrication equipment studied and used include oxidation/diffusion, CVD reactors, photolithography, plasma etching, vacuum evaporator, ion implantation, etc. Instruments used in process monitoring and final testing include thin film profilometer, ellipsometer, resistivity probe, scanning electron microscope, capacitance-voltage system, etc. The fundamentals of hazardous material handling and clean room procedures are studied. Prerequisites/Corequisites: Prerequisite: ECSE 4250 or equivalent. When Offered: Spring term annually. Cross Listed: Cross listed as MTLE 6300. Students cannot receive credit for both this course and MTLE 6300. Credit Hours: 3
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3.00 Credits
Analysis of the dynamics of plasma behavior in terms of statistical models. Development of the Boltzmann equation, the moment equations of continuity, momentum, and energy, and their application to plasma transport processes. When Offered: Fall term odd-numbered years. Credit Hours: 3
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3.00 Credits
Plasma kinetic theory, suitability of magnetically confined plasmas, plasma radiation, plasma turbulence. Prerequisites/Corequisites: Prerequisite: ECSE 6310. When Offered: Spring term even-numbered years. Credit Hours: 3
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3.00 Credits
Analysis of magnetically confined high-temperature devices. Equilibrium and stability of a variety of magnetic confinement systems. Diagnostic techniques, current status of experimental results, and relationship to the development of controlled fusion. Prerequisites/Corequisites: Prerequisite: ECSE 6320. When Offered: Fall term on sufficient demand. Credit Hours: 3
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3.00 Credits
Investigation of the major diagnostic techniques used for measuring parameters in magnetically confined plasmas. Several examples of mechanical, radiation, and particle techniques are developed. Emphasis is placed on the basic principles behind each technique, the hardware necessary to perform the measurements, the space and time limitations on the technique, and its role in studying fusion-oriented plasmas. Prerequisites/Corequisites: Prerequisites: ECSE 6310 and ECSE 6320. When Offered: Spring term on sufficient demand. Credit Hours: 3
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