ECSE 6260 - Semiconductor Power Devices

Institution:

Roberts Wesleyan University

Subject:

Description:

Special problems of semiconductor devices operating at high voltage and high current levels. Devices include p-i-n and Schottky diodes, bipolar junction transistors, power MOSFETs and thyristors. Topics include space charge limited current flow, microplasmas, avalanche breakdown, junction termination, high-level injection, emitter crowding, double injection, second breakdown, triggering mechanisms, plasma propagation, switching and recovery characteristics. Introduction to the Insulated-Gate Bipolar Transistor. Prerequisites/Corequisites: Prerequisites: ECSE 6230 and ECSE 6290 or basic knowledge (at the graduate level) of semiconductor devices or permission of the instructor. When Offered: Spring term odd-numbered years. Credit Hours: 3

Credits:

3.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

WWW.Roberts.edu

Phone Number:

(585) 594-6000

Regional Accreditation:

Middle States Association of Colleges and Schools

Calendar System:

Semester

The Course Profile information is provided and updated by third parties including the respective institutions. While the institutions are able to update their information at any time, the information is not independently validated, and no party associated with this website can accept responsibility for its accuracy.