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Institution:
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Roberts Wesleyan University
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Subject:
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Description:
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Fabrication technology for silicon and gallium arsenide integrated circuits with emphasis on sub-micron structures. Topics include epitaxy, diffusion, binary and ternary phase diagrams, grown and deposited oxides and nitrides, polysilicon and silicide technology, single-and multi-metal systems, plasma and chemical etching, ion milling photo, e-beam and X-ray lithography. Prerequisites/Corequisites: Prerequisite: ECSE 4250 or equivalent. When Offered: Spring term even-numbered years. Credit Hours: 3
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Credits:
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3.00
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Credit Hours:
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Prerequisites:
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Corequisites:
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Exclusions:
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Level:
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Instructional Type:
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Lecture
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Notes:
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Additional Information:
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Historical Version(s):
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Institution Website:
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Phone Number:
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(585) 594-6000
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Regional Accreditation:
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Middle States Association of Colleges and Schools
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Calendar System:
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Semester
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