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Course Criteria
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3.00 Credits
An introduction to the principles of optics in which refl ection, refraction and transmission are explained as a result of interference between the excitation fi eld and the atomic oscillations that result in the emission of spherical wavelets (Huygens Principle). Topics include Fresnel Coeffi cients, imagery due to refraction at a single surface, simple lenses, ray tracing techniques, apertures, mirrors and thick lenses. Both the paraxial case (ideal imagery) and aberrations in spherical lenses are covered. An introduction to physical optics and the topics of diffraction and interferometry is provided. These topics set the stage for understanding ellipsometers, steppers, microscopes, and other optical instrumentation utilized in IC manufacturing. Lab required. (1017-313) Class 3, Lab 3, Credit 4 (F, W)
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4.00 Credits
An introduction to the physical mechanisms that govern the operation of metal-oxide semiconductor (MOS) capacitors, MOS fi eld-effect transistors, and related devices. Special emphasis is given to the relation between the structural parameters of these devices and their electrical characteristics. Modern structures and small dimension effects are discussed. Device design and SPICE models for these devices are investigated. BJTs are covered after a thorough investigation of MOSFETs. (0305-460) Class 4, Credit 4 (F, W)
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0.00 Credits
A course covering the physical aspects of lithography. Image formation in optical projection, optical proximity, and high energy systems (DUV/VUV, e-beam/SCALPEL, x-ray, and EUV) are studied. Fresnel diffraction, Fraunhofer diffraction, and Fourier optics are utilized to understand diffraction-limited imaging processes. Topics include illumination, lens parameters, image assessment (resolution, alignment and overlay), phase-shift masking, and resist interactions. Lithographic systems are designed and optimized through use of modeling and simulation packages. Current status of the practical implementation of advanced technologies in industry as well as future requirements will be presented. (0305-221, 320, 350) Class 3, Lab 0, Credit 3 (S, SU)
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3.00 Credits
Laboratory to be taken concurrently with 0305-564. Topics emphasize optical microlithography modeling, illumination systems, reticle enhancement techniques, alignment, and optimization of image capture related to focus, exposure and substrate refl ectivity. Class 0, Lab 3, Credit 1 (S, SU)
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3.00 Credits
A supervised investigation within a microelectronic area of student interest. Proposals for the independent study must be approved by the faculty member and department head and submitted prior to registration. Class variable, Credit variable 1-4
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3.00 Credits
The fundamental silicon based processing steps introduced in 0305-350 are expanded upon to cover state-of-the-art issues such as thin oxide growth, atomistic diffusion mechanisms, advanced ion implantation and rapid thermal processing (RTP). Physical vapor deposition (PVD) to form conductive and insulating fi lms is introduced. MOS capacitance voltage measurement and surface change analysis are studied. These topics are essential for understanding the fabrication of modern IC's. Computer simulation tools (i.e. SUPREM) are used to model processes, build device structures, and predict electrical characteristics, which are compared to actual devices that are fabricated in the associated laboratory. (0305-350, 560) Class 3, Lab 3, Credit 4 (F, W)
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3.00 Credits
This course focuses on the deposition and etching of thin fi lms of conductive and insulating materials for IC fabrication. A thorough overview of vacuum technology is presented to familiarize the student with the challenges of creating and operating in a controlled environment. Chemical Vapor Deposition (CVD) and electroplating technologies are discussed as methods of film deposition. Plasma etching and Chemical Mechanical Planarization (CMP) are studied as methods for selective removal of materials. Applications of these fundamental thin fi lm processes to IC manufacturing are presented. (0305-320, 350) Class 3, Lab 3, Credit 4 (S, SU)
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6.00 Credits
A laboratory course in which students manufacture and test CMOS integrated circuits. Topics include design of individual process operations and their integration into a complete manufacturing sequence. Students are introduced to work in process tracking, ion implantation, oxidation, diffusion, plasma etch, LPCVD, and photolithography. Analog and Digital CMOS devices are made and tested. This course is organized around multidisciplinary teams that address the management, engineering and operation of the student run CMOS factory. (0305-632) Class 2, Lab 6, Credit 4 (F, W)
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0.00 Credits
Covers the chemical aspect of microlithography and resist processes. The chemistry of positive (novolac-based) and chemically amplifi ed resist systems will be studied. Topics include the principles of photo polymerization, including synthesis, photo absorption and emission, processing technologies and methods of process optimization. Also, advanced lithographic techniques and materials, including multi-player techniques for BARC, TARC, and silylation are applied to optical lithography. (0305-221, 320, 350) Class 3, Lab 0, Credit 3 (F, W)
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3.00 Credits
Laboratory will be taken concurrently with 0305-666. Materials characterizations and process optimizations will utilize experimental design techniques. Processes to be studied include development rate monitoring. DUV resists, BARC, resist silylation and SEM evaluation of imaged resists and etched structures. Class 0, Lab 3, Credit 1 (F, W)
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