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Course Criteria
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4.00 Credits
A design-oriented independent study requiring a major design project. (Senior standing) Credit 4
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4.00 Credits
In response to student and/or faculty interest, special courses that are of current interest and/or logical continuation of regular courses will be presented. (Permission of the supervising faculty member and the department head required) See instructor for more details. Class 4, Credit 4
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3.00 Credits
An overview of semiconductor technology history and future trends is presented. The course introduces the fabrication and operation of silicon-based integrated circuit devices including resistors, diodes, transistors and their current-voltage (I-V) characteristics. Laboratory teaches the basics of IC fabrication and I-V measurements. A fi ve-week project provides experience in digital circuit design, schematic capture, simulation, breadboarding, layout design, IC processing and testing. Class 3, Lab 3, Credit 4 (F)
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3.00 Credits
An introduction to the fundamentals of micro/nanolithography. Topics include IC masking, sensitometry, radiometry, resolution, contact lithography, projection lithography, photoresist materials and processing. Laboratories include mask making, source characterization, resist characterization, and stepper operation. (1011-208) Class 3, Lab 3, Credit 4 (S)
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3.00 Credits
An introduction to experimental design concepts for engineering applications. Topics covered include statistics, SPC, Process Capability Analysis, experimental design, analysis of variance, regression and response surface methodology, and design robustness. Students will utilize statistical software (JMP IN) to analyze case studies and design effi cient experiments. (1016-315 or equivalent) Class 3, Lab 3, Credit 4 (W)
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4.00 Credits
The course gives an overview of nanotechnology, including nanofabrication, characterization and applications and provides students with an up-todate summary of nanotechnology-related research, techniques and devices. Students develop skills to understand the realistic potentials of nanotechnology, appreciate associated challenges and possibly foresee the opportunities offered by nanoscale structures. Topics include: 1) basic principles and defi nitions of nanoscience and nanotechnology; 2) nanofabrication techniques with emphasis in differentiating top-down and bottom-up approaches; 3) characterization tools and techniques useful for nanoscale structures; 4) examples of current research and applications in electronics, medicine and energy storage; 5) environmental issues, public acceptance, nanotechnology market and career. (1011-208, 1017-312) Class 4, Credit 4
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4.00 Credits
An introduction to the fundamentals of semiconductor materials and the effects of variations in the material properties of the resulting current-voltage characteristics for two terminal devices, namely resistors and diodes. Topics include electron energies in solids, the statistical physics of carrier concentration and motion in crystals, energy band models, drift and diffusion currents, recombination generation of carriers, continuity equations, and the p-n junction under equilibrium and bias conditions, and metal-semiconductor Scottky and ohmic contacts. Non-idealities associated with real diodes are introduced. Design of integrated two terminal devices and electrical test demonstrations are required. (1017-314) Class 4, Credit 4 (F, S)
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3.00 Credits
The course will focus on bottom-up nanofabrication techniques covering current research topics. The students will implement hands-on nanofabrication processes and will have the opportunity to experience research and development aimed to the fabrication of nanoscale objects. In class, the students will fi rst receive a description of the lab-based sessions and related processes. The rest of the lectures include: 1) Basic principles and defi nition of nanoscience and nanotechnology; 2) Introduction to nanofabrication; 3) Nanofabrication strategies; 4) Nanopatterning; 5) Nanofabrication processes; 6) Examples of nanofabrication theoretical models and simulation techniques; 7) A review of nanofabrication challenges and proposed solutions. (1011-208, 1017-312). Class 3, Lab 3, Credit 4
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3.00 Credits
An introduction to the fundamentals of electrostatic, magnetostatic and time varying fields that culminate with the Maxwell's equations, continuity and Lorentz force that govern the EM phenomena. Important of Laplace's and Poisson's equations in semiconductor applications is described.Electromagnetic properties of material media are discussed with emphasis on boundary conditions. Plane wave solution of Maxwell's equations is derived and discussed in loss-less and lossy media. Applications in optics include refl ection/refraction and polarization of light. An introduction to transmission line theory that applies to interconnects is provided through PSPICE simulation. A strong knowledge of vector calculus is desired. (1016-328, 1017-313) Class 4, Lab 0, (S, Su)
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3.00 Credits
Introduction to the design of CMOS very large scale integrated (VLSI) circuits. Extensive use of Mentor Graphics software in a networked workstation environment, including homework and design project. Topics include logic design and state machines, schematic capture, electrical simulation, geometrical layout, design and electrical rule checking. Standard cell libraries are used for selected assignments. Emphasis is placed on a further understanding of the fabrication process by discussion of mask layers, rule checks and circuit simulation. (0301-240, 482; 0305-350, 560) Class 3, Lab 3, Credit 4 (S, SU)
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