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Course Criteria
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3.00 Credits
Get information from the curriculum office. This is designated as a writing-intensive course. Prerequisites/Corequisites: Corequisite: ENGR 4010. Credit Hours: 3
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3.00 Credits
The analysis of active and passive linear networks, including sensitivity, topological formulas, energy functions, positive real functions, and realizability conditions. The determination of input and transfer functions that approximate a prescribed response. Active circuit elements including negative converters, gyrators, and operational amplifiers. Prerequisites/Corequisites: Prerequisite: ECSE 2050. When Offered: Fall term alternate years. Credit Hours: 3
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3.00 Credits
Design and analysis of wideband amplifiers, differential amplifiers, and operational amplifiers; the characteristics of op-amps and their use as linear and nonlinear elements, including compensation techniques; regulated power supplies. Prerequisites/Corequisites: Prerequisite: ECSE 2050. When Offered: Fall term alternate years. Credit Hours: 3
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3.00 Credits
An introduction to emerging electronic and optoelectronics technology. Topics cover cutting edge technologies and novel device concepts, such as quantum devices, silicon-on-insulators (SOI), compound semiconductor devices and technologies, thin film transistors (TFTs), wide band gap semiconductor devices and technologies, Si-Ge devices, solar cells, photodetectors, semiconductor lasers, opto-electronic ICs, optical interconnects and display technologies. Prerequisites/Corequisites: Prerequisite: ECSE 2210 or equivalent. When Offered: Fall term annually. Credit Hours: 3
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3.00 Credits
The physical operation of modern semiconductor devices and the determination of their internal parameters. Devices include diodes, unipolar and bipolar transistors, and metal-oxide-semiconductor devices. Emphasis is placed on the fundamental mechanisms that contribute to device performance. The interrelationship between device parameters and circuit performance is stressed. Prerequisites/Corequisites: Prerequisite: ECSE 2210 or equivalent. When Offered: Fall term annually. Credit Hours: 3
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3.00 Credits
Fabrication technology for silicon and gallium arsenide integrated circuits with emphasis on sub-micron structures. Topics include epitaxy, diffusion, binary and ternary phase diagrams, grown and deposited oxides and nitrides, polysilicon and silicide technology, single-and multi-metal systems, plasma and chemical etching, ion milling photo, e-beam and X-ray lithography. Prerequisites/Corequisites: Prerequisite: ECSE 4250 or equivalent. When Offered: Spring term even-numbered years. Credit Hours: 3
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3.00 Credits
Physical properties of operation, modeling, and application of selected semiconductor microwave devices. Devices considered include varactors, p-i-n diodes, Schottky barrier diodes, avalanche transit time devices, transferred electron devices and field effect transistors. Terminal behavior of these devices, their noise characteristics, and their use in microwave circuits. Prerequisites/Corequisites: Corequisite: ECSE 6230. When Offered: Offered on sufficient demand. Credit Hours: 3
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3.00 Credits
Special problems of semiconductor devices operating at high voltage and high current levels. Devices include p-i-n and Schottky diodes, bipolar junction transistors, power MOSFETs and thyristors. Topics include space charge limited current flow, microplasmas, avalanche breakdown, junction termination, high-level injection, emitter crowding, double injection, second breakdown, triggering mechanisms, plasma propagation, switching and recovery characteristics. Introduction to the Insulated-Gate Bipolar Transistor. Prerequisites/Corequisites: Prerequisites: ECSE 6230 and ECSE 6290 or basic knowledge (at the graduate level) of semiconductor devices or permission of the instructor. When Offered: Spring term odd-numbered years. Credit Hours: 3
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3.00 Credits
A brief review of interaction of light with matter. Operating principles, basic designs and applications of optoelectronic devices such as Light Emitting Diodes, Laser Diodes, Photodetectors and Solar Cells. Electro-optic, Acousto-optic and Non-linear optic based optical components such as Modulators, Switches, Couplers, Multiplexers and Amplifiers. Optical Waveguides and Fibers. Optoelectronic Applications such as Fiber Optic and Free Space Optical Communication, Photovoltaics, Thermophotovoltaics, and Solid State Lighting. Prerequisites/Corequisites: Prerequisites: ECSE 2210 and ECSE 4720 or equivalent. When Offered: Offered spring term on sufficient demand. Credit Hours: 3
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3.00 Credits
A continuation of ECSE 6230. Physical operation of insulated-gate and heterojunction field-effect devices including short-channel and hot-carrier effects. Studies of other heterojunction devices emphasize the exploitation of particular quantum-mechanical phenomena to achieve unique device behavior. Prerequisites/Corequisites: Prerequisite: ECSE 6230 or equivalent. When Offered: Spring term. Credit Hours: 3
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