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Course Criteria
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3.00 Credits
Students will design and "manufacture" a Si or GaAstransistor through process simulation of ion implantation, epitaxial growth, diffusion and contact formation, etc. I-V characteristics and small signal parameters, suitable for digital and microwave circuit simulation programs, will be derived. Complimentary to ECE 463 and 471. Prerequisite: ECE 308 or 351. Hwang
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3.00 Credits
Introduction to optical information processing and applications. Interference and diffraction of optical waves. 2D optical matched filters that use lenses for Fourier transforms. Methods and devices for modulating light beams for information processing, communications, and optical computing. Construction and application of holograms for optical memory and interconnections. The course is an extension of ECE 371 for graduate students and it will include research projects and advanced assignments. Prerequisite: ECE 108.
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3.00 Credits
Study the design of optical fiber local, metropolitan, and wide area networks. Topics include: passive and active photonic components for optical switching, tuning, modulation and amplification; optical interconnection switches and buffering; hardware and software architectures for packet switching and wavelength division multiaccess systems. This class is supported with a laboratory. The course is an extension of ECE 372 for graduate students and it will include research projects and advanced assignments. Prerequisite: ECE 81.
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3.00 Credits
The fundamentals of analog circuit design with CMOS linear IC techniques. Discrete Analog Signal Processing (DASP) is accomplished with switched-capacitor CMOS circuits. Analog building blocks include operational amplifiers, S/H circuits, comparators and voltage references, oscillators, filters, modulators, phase detectors/shifters, charge transfer devices, etc. Analog sub-system applications are phase-locked loops (PLL's), A/D and D/A converters, modems, sensors, adaptive filters and equalizers, etc. The emphasis is on the physical operation of analog CMOS integration circuits and the design process. Prerequisite: ECE 355 or equivalent. White
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3.00 Credits
Device and circuit models of bipolar and field effect transistors; bipolar and MOS integrated circuit technology; passive components; parasitic and distributed elements; amplifier gain stages; subthreshold gain stages; current sources and active loads; temperature and supply independent biasing; output stage design; frequency response and slew rate limitation; operational amplifier and analog multiplier design. Circuit simulation using SPICE. Prerequisite: ECE 308 or equivalent.
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3.00 Credits
Large signal models and transient behavior of MOS and bipolar transistors. Basic inverter and logic gate circuits. Noise margins, operating speed, and power consumption of various logic families, including MOS, CMOS, saturated logic TTL, ECL, and IIL. Regenerative logic circuits and digital memories. Circuit design and computer- aided circuit analysis for LSI and VLSI circuits. Prerequisite: ECE 308 or equivalent.
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3.00 Credits
The design of very large scale NMOS and CMOS integrated circuits. Strong emphasis on device physics, and on novel circuit design approaches for VLSI implementation. Examination of second-order effects involved in designing high performance MOS digital integrated circuits, with the goal of pushing the design process to the limits determined by our current understanding of semiconductor device physics and of the currently available technologies. The topics include device physics (subthreshold conduction, short channel effects), important circuit innovations (substrate bias generators, sense amplifiers), systems aspects (clocking, timing, array structures), as well as static and dynamic circuit implementations. Design project, using VLSI design automation tools. Prerequisites: ECE 308 (or equivalent) and ECE 361.
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3.00 Credits
Theory of small geometry devices for VLSI circuits. Emphasis of MOS bipolar device static and dynamic electrical characteristics. Carrier injection, transport, storage, and detection in bulk and interfacial regions. Limitations of physical scaling theory for VLSI submicron device structures. MOS physics and technology, test pattern device structures, charge-coupled devices, MNOS nonvolatile memory devices, and measurement techniques for device and process characterization. The influence of defects on device electrical properties. Prerequisite: ECE 451. White
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3.00 Credits
Material properties of compound semiconductor heterojunctions, quantum wells and superlattices. Strained layer epitaxy and band-gap engineering. Theory and performance of novel devices such as quantum well lasers, resonant tunneling diodes, high electron mobility transistors, and heterojunction bipolar transistors. Complementary to ECE 452. Prerequisite: ECE 451. Hwang
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3.00 Credits
The physical operation of sensor-based, custom integrated circuits. Emphasis on the integration of sensors, analog, and digital circuits on a silicon chip with CMOS technology. Sensors include photocells, electrochemical transducers, strain gauges, temperature detectors, vibration and velocity sensors, etc. Analysis of sensor-circuit performance limits including signal-to-noise, frequency response, temperature sensitivity, etc. Examples of sensor- based, custom I.C.'s are discussed and analyzed with CAD modeling and layout. Prerequisite: ECE 451. White
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