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ECE 450: Special Topics
3.00 Credits
Lehigh University
Selected topics in electrical and computer engineering not covered in other courses. May be repeated for credit.
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ECE 450 - Special Topics
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ECE 451: Physics of Semiconductor Devices
3.00 Credits
Lehigh University
Crystal structure and space lattices, crystal binding, lattice waves and vibrations, electrons and atoms in crystal lattices. Quantum mechanics and energy band theory, carrier statistics, Boltzmann transport theory, interaction of carriers with scattering centers, electronic and thermal conduction. Magnetic effects. Generation and recombination theory. Application to p-n junctions. Prerequisite: ECE 126 or equivalent. Decker, Hatalis or White
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ECE 451 - Physics of Semiconductor Devices
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ECE 452: Advanced Semiconductor Diode and Transport Theory
3.00 Credits
Lehigh University
Properties of metal-semiconductor contacts, Schottky barriers, ohmic contacts, hot electrons, intervalley scattering, velocity saturation, secondary ionization, avalanche breakdown. Applications to microwave devices such as avalanche and Gunn diodes, Schottky barrier diodes, tunnel diodes and PIN diodes. Prerequisite: ECE 451. Decker
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ECE 452 - Advanced Semiconductor Diode and Transport Theory
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ECE 454: Turbo Codes and Iterative Decoding
3.00 Credits
Lehigh University
Capacity-approaching error correcting codes. Soft-in soft-out iterative decoding. Parallel/serial/hybrid concatenated convolutional codes-and turbo-like codes. Iterative decoding algorithms and performance analysis of parallel/serial turbo codes. Low density parity check (LDPC) codes and product codes. Code graph and message passing decoding algorithms. Turbo and LDPC code design and construction. Performance analysis using density evolution and extrinsic information transfer charts. Applications of turbo and LDPC codes. Prerequisite: ECE 435 or instructor's approval
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ECE 454 - Turbo Codes and Iterative Decoding
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ECE 455: Theory of Metal Semiconductor and Heterojunction Transistors
3.00 Credits
Lehigh University
Physics of metal semiconductor and heterojunction field effect transistors (MESFET and HEMT). Theory of semiconductor heterojunctions. Properties of heterojunction bipolar transistors (HBT): Equivalent circuits, applications to microwave amplifiers, oscillators, and switching circuits. Prerequisite: ECE 451. Decker
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ECE 455 - Theory of Metal Semiconductor and Heterojunction Transistors
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ECE 460: Engineering Project
3.00 - 6.00 Credits
Lehigh University
Project work in an area of student and faculty interest. Selection and direction of the project may involve interaction with industry. Prerequisite: consent of department chairperson.
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ECE 460 - Engineering Project
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ECE 461: Theory of Electrical Noise
3.00 Credits
Lehigh University
Definitions: noise temperature, spectral density. Noise sources: quantum, thermal, shot, generation-recombination, flicker noise. Representation and optimization of noisy networks. Prerequisites: Phys 31 and ECE 126. Decker
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ECE 461 - Theory of Electrical Noise
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ECE 463: Design of Microwave Solid State Circuits
3.00 Credits
Lehigh University
Equivalent circuit modeling and characterization of microwave semiconductor devices, principles of impedance matching, noise properties and circuit interaction, introduction to the design of high power and non-linear circuits. Decker
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ECE 463 - Design of Microwave Solid State Circuits
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ECE 464: Introduction to Cryptography and Network Security
3.00 Credits
Lehigh University
Introduction to cryptography, classical cipher systems, cryptanalysis, perfect secrecy and the one time pad, DES and AES, public key cryptography covering systems based on discrete logarithms, the RSA and the knapsack systems, and various applications of cryptography. This graduate version of ECE 364 requires additional work. May not be taken with ECE 364 for credit. Prerequisite: Graduate student status.
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ECE 464 - Introduction to Cryptography and Network Security
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ECE 467: Semiconductor Material and Device Characterization
3.00 Credits
Lehigh University
This course covers the main characterization techniques used in semiconductor industry. Emphasis is given to the electrical characterization methods although some optical, and physical analytical techniques are reviewed. The principles and the experimental set up for measuring the following parameters are covered: resistivity; carrier and doping concentration; contact resistance and Schottky barrier height; device series resistance; MOSFET's channel length and threshold voltage; carrier mobility; oxide and interface trapped charge; and carrier lifetime. Laboratory sessions provide hands-on experience on some of the above methods. Prerequisites: ECE 126 and ECE 308, or equivalent. Hatalis
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ECE 467 - Semiconductor Material and Device Characterization
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