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Course Criteria
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3.00 Credits
Integration of curriculum and educational technology in the areas of Language Arts, Social Studies, and Math and Science; with emphasis on telecommunications, multimedia applications, and emerging technologies. May be repeated as long as the topic varies.
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3.00 Credits
Addresses issues and challanges to the use of technology in multicultural settings. Emphasizes the impact of emerging technologies on society and in particular, on education. Examines and critiques digital equity, technology policy, market/political forces on technology policy and educational oppurtunities. Frames the research agenda for the use of technology to support or transform educational practice.
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3.00 Credits
EE 3354 Intro to Communication Networks (3-0)
Familiarization with communication networks through simulation experiments done with computer software. Topics include Protocol Layers, Link Analysis, Circuit & Packet switches, LANs and Internet Protocols. Prerequisites: EE 2351, and EE 2372, each with a grade of "C" or better.
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1.00 Credits
Simulation, fabrication, and testing of MOS technology. Includes silicion oxidation, lithography, etching, thin film deposition and diffusion.
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3.00 Credits
Introduction to the science and technology of integrated device/circuit fabrication. Includes silicon oxidation, lithography, etching, thin film deposition, diffusion and ion implantation.
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3.00 Credits
Underlying philosophy of the theory of fuzzy sets and its applications in engineering. Fuzzy logic, fuzzy reasoning and rules, and fuzzy systems. Decision-making in the realm of vague, qualitative and imprecise data. Current models, simulation tools, hardware implementations and their applications will also be covered.
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3.00 Credits
Analysis and design of digital integrated circuits in CMOS technology. Discussion of different models for MOS transistors and how to use them to analyze circuit performance. Analysis of logic families and styles including complementary static logic, dynamic, and pass-transistor. Topics include sizing for minimum delay, noise and noise margin, power dissipation and cost. A significant circuit design is assigned as a final project such as an SRAM memory or Content Addressable Memory.
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1.00 Credits
EE 5118 Laboratory for EE 5318 (3-0)
Simulation, fabrication and testing of MOS technology. Includes silicon oxidation, lithography, etching, thin film deposition, diffusion and process integration. Corequisite: EE 5318. Prerequisite: EE 3329, with a "C" or better.
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2.00 Credits
Individual variable-credit research, design or analysis on advanced phases of electrical engineering problems conducted under the direct supervision of a faculty member. A maximum of three credit hours may be applied towards. Prerequisite: Departmental approval. Restricted to graduate Electrical and Computer Engineering students.
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3.00 Credits
EE 5318 Electronic Materials Processing (3-0)
The science and technology of integrated device/circuit fabrication including the effect of defects. Includes silicon oxidation, lithography, etching, thin film deposition, diffusion and ion implantation. Corequisite: EE 5118. Prerequisite: EE 3329, with a "C" or better.
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