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Course Criteria
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3.00 Credits
Single-phase and three-phase AC circuits. Mutual inductance and transformers. Laplace transforms and circuit applications. Transfer functions, Bode plots, frequency response, and resonant circuits. Fourier series and filter circuit design. Two-port networks. PREREQ: ECE 210 and MATH 333.
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0.00 Credits
Lab work to accompany. ECE 225 Circuit Analysis and Design. COREQ: ECE 225.
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3.00 Credits
Number systems, Boolean algebra, logic gates, Karnaugh mapping, combinatorial circuits, flip-flops, registers, counters, sequential statemachines. Construction of small design projects. PREREQ: COMPSCI 117 or COMPSCI 125.
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0.00 Credits
Design, construction, and test of small digital logic circuits using TTL and CMOS gates, flip-flops, registers, counters, LED's. COREQ: ECE 230.
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0.00 Credits
Competency-based examination to assess student ability in mathematics, basic sciences and engineering. Required for admission to upper-division ECE curriculum (Pass/Fail.) PREREQ: ECE 210, ECE 230, ENGR 245, MATH 333. COREQ: COMPSCI 225, ECE 225, MATH 275, PHYS 212.
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3.00 Credits
Physical principles underlying the electrical properties of metals, insulators and semiconductors. The effects of energy band structure, thermal properties and impurities on electrical conduction. Concepts covered are applied to electrical devices including nanodevices, MOSFETs and optoelectronic devices. May be taken for ECE or MSE credit, but not both. PREREQ: ENGR 245, MATH 333 and PHYS 309 or ECE 225.
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3.00 Credits
Circuit design and analysis using diodes, bipolar junction transistors, and MOSFETs. Introduction to design with op-amps. Circuit simulation with SPICE. PREREQ: ECE 225 and ECE 288.
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0.00 Credits
Hands-on design, construction, and test of electronic circuits using signal generators, power supplies, and oscilloscopes. COREQ: ECE 322.
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3.00 Credits
Fundamentals of solid-state electronic devices. Energy band theory, drift, diffusion, generation and recombination of carriers. Physics, modeling, and biasing of diodes, MOSFETs, BJTs. Electronics of metal-semiconductor junctions and the MOS capacitor structure. SPICE model development. Introduction to 2-D device design software. PREREQ: ENGR 245 and ECE 322.
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0.00 Credits
Measurement of PN junction, BJT, and MOSFET I-V and C-V characteristics by on-wafer probing. SPICE model parameter extraction. COREQ: ECE 323.
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