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Course Criteria
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4.00 Credits
Lecture-3 hours; discussion-1 hour. Prerequisite:course 130A. Plane wave propagation in lossy media, reflections, guided waves, simple modulated waves and dispersion, and basic antennas.-III. (III.)
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5.00 Credits
Lecture-3 hours; laboratory-3 hours; discussion? hour. Prerequisite: course 110B, 130B, 140B. The study of Radio Frequency and Microwave theory and practice for design of wireless electronic systems. Transmission lines, microwave integrated circuits, circuit analysis of electromagnetic energy transfer systems, the scattering parameters.-I. (I.)
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5.00 Credits
Lecture-3 hours; laboratory-3 hours; discussion? hour. Prerequisite: course 132A. Passive RF and microwave device analysis, design, fabrication, and testing for wireless applications. RF and microwave filter and coupler design. Introductory analysis and design of RF and microwave transistor amplifiers.- II. (II.)
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5.00 Credits
Lecture-3 hours; laboratory-3 hours; discussion? hour. Prerequisite: course 132B. Microwave amplifier theory and design, including transistor circuit models, stability considerations, noise models and low noise design. Theory and design of microwave transistor oscillators and mixers.-III. (III.)
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4.00 Credits
Lecture-3 hours; discussion-1 hour. Prerequisites:course 130B. Properties of electromagnetic radiation; analysis and design of antennas: ideal cylindrical, small loop, aperture, and arrays; antenna field measurements.-I. (I.)
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4.00 Credits
Lecture-3 hours; project. Prerequisite: course 130B. Principles of optical communication systems. Planar dielectric waveguides. Optical fibers: single-mode, multi-mode, step and graded index. Attenuation and dispersion in optical fibers. Optical sources (LEDs and lasers) and receivers. Design of digital optical transmission systems.-II. (II.)
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3.00 Credits
Lecture-1 hours; discussion-1 hour; laboratory-hours. Prerequisite: courses 135 and 150A. Characteristics and applications of state-of-the-art opto-electronic components (semiconductor detectors, optical modulators and optical fibers), and fiber optic communication systems.-III. (III.)
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4.00 Credits
Lecture-3 hours; discussion-1 hour. Prerequisite:Engineering 17; Physics 9D. Semiconductor device fundamentals, equilibrium and non-equilibrium statistical mechanics, conductivity, diffusion, density of states, electrons and holes, p-n junctions, Schottky junctions, and junction field effect transistors.-I, II. (I, II.)
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4.00 Credits
Lecture-3 hours; discussion-1 hour. Prerequisite:course 140A. Electrical properties, design, and models for Bipolar and MOS devices.-III. (III.)
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3.00 Credits
Lecture-2 hours; laboratory-3 hours. Prerequisite:course 140B. Basic fabrication processes for Metal Oxide Semiconductor (MOS) integrated circuits. Laboratory assignments covering oxidation, photolithography, impurity diffusion, metallization, wet chemical etching, and characterization work together in producing metal-gate PMOS test chips which will undergo parametric and functional testing.- I. (I.)
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