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Course Criteria
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4.00 Credits
Theory, fabrication, and characterization of solid state devices including P-N junctions, capacitors, bipolar and MOS devices. Devices are fabricated using modern VLSI processing techniques including lithography, oxidation, diffusion, and evaporation. Physics and performance of processing steps are discussed and analyzed.
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4.00 Credits
Design, simulation, fabrication, and characterization of NMOS integrated circuits. Circuit design and layout is performed using commercial layout software. Circuits are fabricated using modern VLSI processing techniques. Circuit and discrete device electrical performance are analyzed.
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4.00 Credits
Practical issues in VLSI circuit design, pad/pin limitations, clocking and interfacing standards, electrical packaging for high-speed and high-performance design. On-chip noise and crosstalk, clock and power distribution, architectural and circuit design constraints, interconnection limits and transmission line effects.
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4.00 Credits
Advanced digital VLSI design: CMOS scaling, nanoscale issues including variability, thermal management, interconnects, reliability; non-clocked, clocked and self-timed logic gates; clocked storage elements; high-speed components, PLLs and DLLs; clock and power distribution; memory systems; signaling and I/O design; low-power design.
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4.00 Credits
Analysis of continuous time linear systems in the time and frequency domains. Superposition and convolution. Bilateral and unilateral Laplace transforms. Fourier series and Fourier transforms. Filtering, modulation, and feedback.
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4.00 Credits
Analysis of discrete time linear systems in the time and frequency domains. Z transforms, Discrete Fourier transforms. Sampling and aliasing.
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4.00 Credits
Basic techniques for the analysis of linear models in electrical engineering: Gaussian elimination, vector spaces and linear equations, orthogonality, determinatnts, eigenvalues and eigenvectors, systems of linear differential equations, positive definite matrices, singular value decomposition.
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4.00 Credits
Electrons and holes in semiconductors; doping (P and N); state occupation statistics, transport properties of electrons and holes; P-N junction diodes; I-V, C-V, and switching properties of P-N junctions; introduction of bipolar transitors, MOSFET's and JFET's.
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4.00 Credits
Introduction to applied electromagnetics and wave phenomena in high frequency electron circuits and systems. Waveson transmission-lines, elements of electrostatics and magnetostatics and appications, plane waves, examples and applications to RF, microwave, and optical systems.
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4.00 Credits
Optical fiber as a transmission medium, dispersion and nonlinear effects in fiber transmission, fiber and semiconductor optical amplifiers and lasers, optical modulators, photo detectors, optical receivers, wavelength division multiplexing components, optical filters, basic transmission system analysis and design.
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