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Course Criteria
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4.00 Credits
Physics of VLSI fabrication, emphasizing processing modeling and simulation. CMOS process, sequences, point defects and diffusion, ion implantation and annealing, film growth kinetics, deposition and etching, advanced photolithography. Process interactions and process integration. Extensive use of process simulation software. Offered: jointly with MSE 528.
Prerequisite:
either E E 486/MSE 467, E E 520/M E 504/MSE 504, or E E 527
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4.00 Credits
Afromowitz, Yee Perturbations of energy states in semiconductors; direct and indirect transitions; absorption processes; optical constants; absorption spectroscopy; radiative and nonradiative transitions; processes occurring at p-n junctions; junction devices; LEDs and lasers, photovoltaics; self-e ro-optic effect device; modern laser structures.
Prerequisite:
graduate standing or permission of instructor
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4.00 Credits
No course description available.
Prerequisite:
Separate File
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4.00 Credits
Darling, Lauritzen, Yee Physical principles in semiconductor devices. Generation, recombination, p-n junctions, MOS, metalsemiconductor and other interface structures. Carrier transport at low and high level injection levels. Device simulation used to demonstrate physical principles and basic device operation. Project using device simulation.
Prerequisite:
E E 482 or graduate standing
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4.00 Credits
Darling Compact modeling of semiconductor devices. Analytical models, standard SPICE models, lumped-charge models using AHDL language. Emphasis on basic diodes, MOSFET, BJTs, and other models of interest, including sensor, photonic, and power models. Compact models using AHDL language model design project.
Prerequisite:
E E 531 or permission of instructor
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4.00 Credits
Afromowitz, Yee Includes both the device physics and signal processing aspects of photodetection. Photodiodes, photoconductors, photomultipliers, and solar cells are covered. Noise, signal to noise ratios and imaging considerations are also discussed.
Prerequisite:
E E 482 or graduate standing
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4.00 Credits
Detailed study of DC-to-AC inverters, pulse-width modulated and resonant DC-to-DC converter topologies; drive and protection circuits for efficient switching of semiconductor devices. Includes extensive computer-aided circuit simulation and power supply control.
Prerequisite:
graduate standing
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4.00 Credits
Helms, Soma Design of analog VLSI: specifications, design, simulation, layout. Covering CMOS and Bi CMOS technologies. Prerequisite: E E 433 or equivalent and graduate standing in e rical or computer engineering, or permission of instructor.
Prerequisite:
E E 433 or equivalent and graduate standing in electrical or computer engineering, or permission of instructor
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3.00 Credits
Introduction to numerical algorithms and computer-aided techniques for the simulation of e ronic circuits. Theoretical and practical aspects of important analyses: large-signal nonlinear DC, small-signal AC, nonlinear transient, and largesignal steady-state. Simulation concepts applied to the modeling and characterization of various electronic devices.
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1.00 - 5.00 Credits
Topics of current interest in e ronic circuit and system design. Course content varies from year to year, based on current professional interests of the faculty member in charge.
Prerequisite:
permission of instructor
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