|
|
|
|
|
|
|
|
|
|
Course Criteria
Add courses to your favorites to save, share, and find your best transfer school.
-
4.00 Credits
CAS PY 313. Review of wave optics. Gaussian and Hermite-Gaussian optical beams. Planar- and spherical-mirror resonators. Photon streams. Absorption, spontaneous emission, and stimulated emission. Laser amplification and gain saturation. Laser oscillation; pulsed lasers. Photon interactions in semiconductors. LEDs and semiconductor injection lasers. Photon detectors. Laboratory experiments: beams; divergence and collimation; electroluminescence; semiconductor injection lasers. 4 cr.
-
4.00 Credits
ENG EC 311 and ENG EC 410. Very large-scale integrated circuit design. Review of MOSFET basics. Functional module design, including BiCMOS, combinational and sequential logic, programmable logic arrays, finite-state machines, ROM, and RAM. Fabrication techniques, layout strategies, scalable design rules, design-rule checking, guidelines for testing and testability. Analysis of factors affecting speed of charge transfer, power requirements, and control and minimization of parasitic effects. Survey of VLSI applications. Extensive CAD laboratory accompanies course. 4 cr.
-
3.00 Credits
CAS PY 313. Study of the fundamentals of quantum mechanics necessary to understand the properties of semiconductor materials. Study of the electrical and optical properties of materials, including crystal structure and bonding, free electron theory, band theory of solids and semiconductors. Carrier transport properties, dielectric, ferroelectrics, and magnetic properties. Cannot be taken for credit in addition to CAS PY 543. 4 cr.
-
4.00 Credits
ENG EC 410, ENG EC 455, and CAS PY 313 or equivalent. Fundamentals of carrier generation, transport, recombination, and storage in semiconductors. Physical principles of operation of the PN junction, metal-semiconductor contact, bipolar junction transistor, MOS capacitor, MOSFET (Metal Oxide Semiconductor Field Effect Transistor), JFET (Junction Field Effect Transistor), and bipolar junction transistor. Develops physical principles and models that are useful in the analysis and design of integrated circuits. 4 cr.
-
4.00 Credits
coreq: ENG EC 410. Presentation of fabrication procedures for silicon integrated circuits: physical properties of bulk and epitaxially grown silicon; silicon processing such as oxidation, diffusion, epitaxy, deposition, and ion implantation; silicon crystallography, anisotropic etching, piezoresistivity, photolithography and chemical and plasma techniques. The limitations these processes impose on the design of bipolar and MOS devices and integrated circuits are discussed. Design of an integrated circuit and the required processing. Includes lab. 4 cr.
-
4.00 Credits
graduate standing plus an undergraduate course in semiconductors at the level of ENG EC 410, ENG EC 471, CAS PY 313, or CAS PY 354, or consent of instructor. Physical processes and manufacturing strategies for the fabrication and manufacture of microelectronic devices. Processing and device aspects instrumental in silicon, including the fabrication of doping distributions, etching, photolithography, interconnect construction, and packaging. Future directions and connections to novel devices, MEMS, photonics, and nanoscale structures will be discussed. Emphasis will be on "designing for manufacturability." The overall integration with methods and tools employed by device and circuit designers will be covered. Same as MN 579; students may not receive credit for both. 4 cr.
-
4.00 Credits
ENG EC 412. Anatomy of an operational amplifier analyzed using chip design techniques. Applications of op amps in wave-shaping circuits, active filters including capacitive switching. Analog multiplexing and data acquisition circuits; A/D, D/A, S/H are examined. Frequency selective circuits, and interface circuits such as optocouplers, are analyzed. 4 cr.
-
4.00 Credits
ENG EC 412 and ENG EC 571 or consent of instructor. Fundamentals related to CMOS and SiGe BICMOS analog circuits for RF applications. Topics include low noise amplifiers, oscillators, mixers, demodulators, phase-locked loop, switched capacitor circuits, A/D and D/A converters, low power design, RF design techniques, and mixed-signal circuity typical of modern telecommunications technology. VLSI laboratory exercises involving the design, layout, and simulation of RF/analog integrated circuits using Cadence spectreRF CAD software tools. Real-world examples in advanced mixed-signal integrated circuit applications, such as single chip radio. 4 cr.
-
2.00 Credits
CAS PY 313; coreq: ENG EC 560. Introduction to optical measurements. Laser Safety issues. Laboratory experiments: introduction to lasers and optical alignment; interference; diffraction and Fourier optics; polarization components; fiber optics; optical communciations; beam optics; longitudinal laser modes. Optical simulation software tools. 2 cr.
-
3.00 Credits
in ECE Advanced Laboratories in a specific topic in electrical, computer, or systems engineering. Subject varies from year to year and is generally from an area of current or emerging research. Variable cr. TOP OF PAGE ENG ME 201 Introduction to Aircraft Performance Introduction to the fundamental concepts in aerospace engineering including basic fluid mechanics, the science of flight, and aircraft performance parameters. 2 cr.
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Privacy Statement
|
Terms of Use
|
Institutional Membership Information
|
About AcademyOne
Copyright 2006 - 2024 AcademyOne, Inc.
|
|
|