EECE 283 - Principles and Models of Semiconductor Devices

Institution:

Vanderbilt University

Subject:

Description:

Physical principles of operation of the p-n junction, MOS field-effect transistor, and bipolar transistor. Fundamentals of charge transport, charge storage, and generation-recombination; application to the operation of MOSFET and BJT. Device modeling with emphasis on features and constraints of integrated circuit technologies. Prerequisite: EECE 235 or consent of instructor. SPRING.

Credits:

3.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.vanderbilt.edu

Phone Number:

(615) 322-7311

Regional Accreditation:

Southern Association of Colleges and Schools

Calendar System:

Semester

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