EMSE 514 - Defects in Semiconductors

Institution:

Case Western Reserve University

Subject:

Description:

Presentation of the main crystallographic defects in semiconductors; point defects (e.g., vacancies, interstitials, substitutional and interstitial impurities), line defects (e.g., dislocations), planar defects (e.g., grain boundaries). Structural, electrical and optical properties of various defects. Interpretation of the properties from the perspective of semiconductor physics and materials science and correlation of these defects to physical properties of the material. Experimental techniques including TEM, EBIC, CL, DLTS, etc. Recommended preparation: EMSE 426.

Credits:

3.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.case.edu

Phone Number:

(216) 368-2000

Regional Accreditation:

North Central Association of Colleges and Schools

Calendar System:

Semester

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