EENG 3510 - Electronics I

Institution:

University of North Texas System

Subject:

Description:

3 hours. Introduction to contemporary electronic devices, terminal characteristics of active semiconductor devices, and models of the BJT and MOSFET in cutoff and saturation region are introduced. Incremental and DC models of junction diodes, bipolar transistors (BJTs), and metal-oxide semiconductor field effect transistors (MOSFETs) are studied to design single and multistage amplifiers. Prerequisite(s): EENG 2910.

Credits:

3.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

untsystem.unt.edu/

Phone Number:

(214) 752-8585

Regional Accreditation:

Southern Association of Colleges and Schools

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