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Institution:
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Dartmouth College
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Subject:
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Description:
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Not offered in the period from 08F through 10S The design methodology of Very Large Scale Integrated (VLSI) circuits as practiced in industry will be discussed. Topics considered will include a review of integrated Complementary Metal Oxide Semiconductor (CMOS) device basics, fundamental device configurations in circuits, logic circuit building blocks (inverters, latches, etc.), charge storage and sensing techniques, circuit modeling and analysis techniques, layout rules and their derivation, and circuit design checking tools. A design project is also required in which the student will design, analyze, and optimize a small CMOS circuit. This analysis and some homework assignments will require the student to perform analog circuit simulations to verify digital circuit performance. The project will then be fabricated by the MOSIS service and delivered in the Spring term. Final testing and evaluation are then performed. Grades will be withheld until these final steps are completed. Prerequisite: Engineering Sciences 32, 63 or permission.
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Credits:
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3.00
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Credit Hours:
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Prerequisites:
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Corequisites:
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Exclusions:
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Level:
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Instructional Type:
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Lecture
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Notes:
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Additional Information:
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Historical Version(s):
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Institution Website:
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Phone Number:
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(603) 646-1110
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Regional Accreditation:
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New England Association of Schools and Colleges
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Calendar System:
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Quarter
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