EE 488 - VLSI Devices

Institution:

University at Buffalo

Subject:

Description:

Credits: 3 Prerequisites: EE 311 Corequisites: None Type: LEC Device fundamentals of CMOS field effect transistors and BiCMOS bipolar transistors. Device parameters and performance factors important for VLSI devices of deep-submicron dimensions. Reviews silicon materials properties, basic physics of p-n junctions and MOS capacitors, and fundamental principles of MOSFET and bipolar transistors. Design and optimization of MOSFET and bipolar devices for VLSI applications. Discusses interdependency and tradeoffs of device parameters pertaining to circuit performance and manufacturability. Also discusses effects in small-dimension devices: quantization in surface inversion layer in a MOSFET device, heavy-doping effect in the bipolar transistor, etc.

Credits:

3.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.buffalo.edu

Phone Number:

(716) 645-2000

Regional Accreditation:

Middle States Association of Colleges and Schools

Calendar System:

Semester

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