ENG EC 578 - Fabrication Technology for Integrated CircuitsPrereq

Institution:

Boston University

Subject:

Description:

coreq: ENG EC 410. Presentation of fabrication procedures for silicon integrated circuits: physical properties of bulk and epitaxially grown silicon; silicon processing such as oxidation, diffusion, epitaxy, deposition, and ion implantation; silicon crystallography, anisotropic etching, piezoresistivity, photolithography and chemical and plasma techniques. The limitations these processes impose on the design of bipolar and MOS devices and integrated circuits are discussed. Design of an integrated circuit and the required processing. Includes lab. 4 cr.

Credits:

4.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lab

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.bu.edu

Phone Number:

(617) 353-2000

Regional Accreditation:

New England Association of Schools and Colleges

Calendar System:

Semester

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