0305-632 - Silicon Processes

Institution:

Rochester Institute of Technology

Subject:

Description:

The fundamental silicon based processing steps introduced in 0305-350 are expanded upon to cover state-of-the-art issues such as thin oxide growth, atomistic diffusion mechanisms, advanced ion implantation and rapid thermal processing (RTP). Physical vapor deposition (PVD) to form conductive and insulating fi lms is introduced. MOS capacitance voltage measurement and surface change analysis are studied. These topics are essential for understanding the fabrication of modern IC's. Computer simulation tools (i.e. SUPREM) are used to model processes, build device structures, and predict electrical characteristics, which are compared to actual devices that are fabricated in the associated laboratory. (0305-350, 560) Class 3, Lab 3, Credit 4 (F, W)

Credits:

3.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.rit.edu/

Phone Number:

(585) 475-2411

Regional Accreditation:

Middle States Association of Colleges and Schools

Calendar System:

Quarter

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