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Institution:
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Rochester Institute of Technology
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Subject:
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Description:
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An introduction to the fundamentals of semiconductor materials and the effects of variations in the material properties of the resulting current-voltage characteristics for two terminal devices, namely resistors and diodes. Topics include electron energies in solids, the statistical physics of carrier concentration and motion in crystals, energy band models, drift and diffusion currents, recombination generation of carriers, continuity equations, and the p-n junction under equilibrium and bias conditions, and metal-semiconductor Scottky and ohmic contacts. Non-idealities associated with real diodes are introduced. Design of integrated two terminal devices and electrical test demonstrations are required. (1017-314) Class 4, Credit 4 (F, S)
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Credits:
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4.00
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Credit Hours:
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Prerequisites:
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Corequisites:
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Exclusions:
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Level:
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Instructional Type:
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Lecture
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Notes:
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Additional Information:
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Historical Version(s):
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Institution Website:
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Phone Number:
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(585) 475-2411
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Regional Accreditation:
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Middle States Association of Colleges and Schools
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Calendar System:
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Quarter
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