0305-560 - Semiconductor Devices II

Institution:

Rochester Institute of Technology

Subject:

Description:

An introduction to the physical mechanisms that govern the operation of metal-oxide semiconductor (MOS) capacitors, MOS fi eld-effect transistors, and related devices. Special emphasis is given to the relation between the structural parameters of these devices and their electrical characteristics. Modern structures and small dimension effects are discussed. Device design and SPICE models for these devices are investigated. BJTs are covered after a thorough investigation of MOSFETs. (0305-460) Class 4, Credit 4 (F, W)

Credits:

4.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.rit.edu/

Phone Number:

(585) 475-2411

Regional Accreditation:

Middle States Association of Colleges and Schools

Calendar System:

Quarter

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