0301-612 - Advanced Semiconductor Devices

Institution:

Rochester Institute of Technology

Subject:

Description:

Continuation of an undergraduate professional elective sequence in semiconductor device physics. Coverage of four major topics: (1) bipolar junction transistor (BJT) fundamentals, including carrier injection, current gain, modes of operation, Ebers-Moll model; (2) BJT advanced topics, including Early effect, high-level injection, Kirk effect, charge-control model, and small-signal models; (3) MOSFET transistor fundamentals, including charge-control analysis, current-voltage characteristics, threshold voltage, and CMOS; (4) MOSFET advanced topics, including channel-length modulation, sub threshold current, velocity saturation, scaled MOS devices, drain induced barrier lowering (DIBL), hot carrier effects and scaling issues. (0301-360) Class 4, Credit 4 (W)

Credits:

4.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.rit.edu/

Phone Number:

(585) 475-2411

Regional Accreditation:

Middle States Association of Colleges and Schools

Calendar System:

Quarter

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