16.470 - VLSI FabricationCredits

Institution:

University of Massachusetts-Lowell

Subject:

Description:

3 Fabrication of resistors, capacitors, p-n junction and Schottky barrier diodes, BJT's and MOS devices and integrated circuits. Topics include: silicon structure, wafer preparation, sequential techniques in microelectronic processing, testing and packaging, yield and clean room environments. MOS structures, crystal defects, Fick's laws of diffusion; oxidation of silicon, photolithography including photoresist, development and stripping. Metallization for conductors, Ion implantation for depletion mode and CMOS transistors for better yield speed, low power dissipation and reliability. Students will fabricate circuits using the DSIPL Laboratory. Pre-Req: 16.365 Electronics I

Credits:

3.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.uml.edu

Phone Number:

(978) 934-4000

Regional Accreditation:

New England Association of Schools and Colleges

Calendar System:

Semester

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