EE 431 - Semiconductor Device Modeling for VLSI

Institution:

Western New England University

Subject:

Description:

Prerequisite: EE 312 or equivalent. This course will describe the operation and characteristics of high speed devices: submicron silicon MOSFETS and Silicon Bipolar Transistors for high frequency and VLSI applications. It will also cover the basics of MESFETS and some high speed devices using compound semiconductors (HEMTs and HBTs). 3 cr.

Credits:

3.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.wne.edu

Phone Number:

(413) 782-3111

Regional Accreditation:

New England Association of Schools and Colleges

Calendar System:

Semester

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