EGEE 523B - CMOS VLSI Design--Electrical Engineering

Institution:

California State University-Fullerton

Subject:

Description:

Description: Prerequisites: EGEE 465 and EGEE 448 or equivalent. Surface physics of MOS system, MOS device physics. Short channel effect; hot carrier effect, subthreshold conduction. CMOS fabrication process. Layout design rules. Scaling design and analysis of CMOS circuits. Standard cell method. CAD design and SPICE simulation. Units: 3

Credits:

3.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.fullerton.edu

Phone Number:

(657) 278-2011

Regional Accreditation:

Western Association of Schools and Colleges

Calendar System:

Semester

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