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Institution:
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Polytechnic Institute of New York University
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Subject:
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Description:
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3.5:1.5:1:4 Circuit models and frequency response of amplifiers. Op-amps, difference amplifier, voltage-to-current converter, slew rate, fullpowerbandwidth, common-mode rejection, frequency response of closed loop amplifier, gain-bandwidth product rule. Diodes, limiters, clamps, semiconductor physics. Bipolar Junction Transistors, small-signal models, cut-off, saturation and active regions, common emitter, common base and emitter follower amplifier configurations. Field-Effect Transistors (MOSFET and JFET), biasing, small-signal models, common-source and common gate amplifiers, integrated circuit MOS amplifiers. Alternate-week laboratory experiments on OP-AMP applications, BJT biasing and large signal operation, and FET characteristics. Objectives: to study design and analysis of operational amplifiers, small signal bipolar junction transistor and field effect transistor amplifiers, diode circuits, differential pair amplifiers and the fundamentals of semiconductor device physics. Prerequisites: EE 2024 (C- or better) and PH 2004. ABET competencies a, c, e, g, k.
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Credits:
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3.00
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Credit Hours:
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Prerequisites:
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Corequisites:
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Exclusions:
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Level:
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Instructional Type:
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Lecture
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Notes:
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Additional Information:
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Historical Version(s):
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Institution Website:
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Phone Number:
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(718) 260-3100
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Regional Accreditation:
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Middle States Association of Colleges and Schools
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Calendar System:
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Semester
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