ECE 483 - Advanced Semiconductor Devices for VLSI Circuits

Institution:

Lehigh University

Subject:

Description:

Theory of small geometry devices for VLSI circuits. Emphasis of MOS bipolar device static and dynamic electrical characteristics. Carrier injection, transport, storage, and detection in bulk and interfacial regions. Limitations of physical scaling theory for VLSI submicron device structures. MOS physics and technology, test pattern device structures, charge-coupled devices, MNOS nonvolatile memory devices, and measurement techniques for device and process characterization. The influence of defects on device electrical properties. Prerequisite: ECE 451. White

Credits:

3.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.lehigh.edu

Phone Number:

(610) 758-3000

Regional Accreditation:

Middle States Association of Colleges and Schools

Calendar System:

Semester

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