ECE 479 - Advanced MOS VLSI Design

Institution:

Lehigh University

Subject:

Description:

The design of very large scale NMOS and CMOS integrated circuits. Strong emphasis on device physics, and on novel circuit design approaches for VLSI implementation. Examination of second-order effects involved in designing high performance MOS digital integrated circuits, with the goal of pushing the design process to the limits determined by our current understanding of semiconductor device physics and of the currently available technologies. The topics include device physics (subthreshold conduction, short channel effects), important circuit innovations (substrate bias generators, sense amplifiers), systems aspects (clocking, timing, array structures), as well as static and dynamic circuit implementations. Design project, using VLSI design automation tools. Prerequisites: ECE 308 (or equivalent) and ECE 361.

Credits:

3.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.lehigh.edu

Phone Number:

(610) 758-3000

Regional Accreditation:

Middle States Association of Colleges and Schools

Calendar System:

Semester

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