EE 3110 - Electronic Devices Laboratory

Institution:

The University of Texas at Dallas

Subject:

Description:

Laboratory to accompany EE 3310. Experimental determination and illustration of properties of carriers in semiconductors including carrier drift, carrier diffusion; p-n junctions including forward and reverse bias effects and transient effects; bipolar transistors including the Ebers-Moll model and secondary effects; field effect transistors including biasing effects, MOS capacitance and threshold voltage. Corequisite: CE/EE 3310. Pre- or corequisite: ECS 3390. (Same as CE 3110) (0-1) S

Credits:

1.00 - 3.00

Credit Hours:

Prerequisites:

Corequisites:

Exclusions:

Level:

Instructional Type:

Lecture

Notes:

Additional Information:

Historical Version(s):

Institution Website:

www.utdallas.edu

Phone Number:

(972) 883-2111

Regional Accreditation:

Southern Association of Colleges and Schools

Calendar System:

Semester

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